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| transistor(npn) features switching transistor marking: MMBT4401=2x maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb =50 v, i e =0 0.1 a collector cut-off current i ceo v ce =30 v, i b =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe v ce =1v, i c =150ma 100 300 collector-emitter saturation voltage v ce(sat) i c =150ma, i b =15ma 0.4 v base-emitter saturation voltage v be(sat) i c = 150ma, i b =15ma 0.95 v transition frequency f t v ce = 10v, i c = 20ma f = 100mhz 250 mhz symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55to +150 r ? ja thermal resistance, junction to ambient 357 /mw sot-23 1. base 2. emitter 3. collector MMBT4401 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBT4401 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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